| PART |
Description |
Maker |
| 4AE11 |
Silicon NPN/PNP Triple Diffused(三倍扩散NPN/PNP晶体
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
|
Hitachi,Ltd.
Renesas Technology / Hitachi Semiconductor
|
| 2SB857 2SB858 |
Silicon PNP Transistor
Silicon PNP Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 2SB1645 |
Silicon PNP triple diffusion planar type Darlington(For power amplification) 8 A, 160 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SB860 |
Silicon PNP Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 2SB1091 |
Silicon PNP Triple Diffused
|
Renesas Electronics Corporation
|
| 2SB1032 2SB1032K |
Silicon PNP Triple Diffused
|
Renesas Technology / Hitachi Semiconductor
Renesas Electronics Corporation
|
| 2SB1103 |
Silicon PNP Triple Diffused
|
Renesas Electronics Corporation
|
| 2SB566 2SB566A 2SB566AK 2SB566K HITACHILTD.-2SB566 |
Silicon PNP Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 2SB857 |
Silicon PNP Triple Diffused
|
Renesas Electronics Corporation
|
| 2SB1079 |
Silicon PNP Triple Diffused
|
Renesas Electronics Corporation
|
| 2SB137506 2SB1375 |
Silicon PNP Triple Diffused Type
|
Toshiba Semiconductor
|
